| PART |
Description |
Maker |
| AEH40F48 AEH40F48N AEH40K48 AEH40K48N |
AEH40Series
132 Watts / 48 Watts DC-DC Converter
DC-DC / Industry Standard Isolated Half Brick
|
Emerson Network Power
Astec America, Inc
|
| BUT33 |
RP20 (F) Series - Powerline Regulated DC-DC Converters; Input Voltage (Vdc): 48V; Output Voltage (Vdc): 3.3V; 2:1 Wide Input Voltage Range; 20 Watts
POWERLINE: RP20-S_DEW - 4:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 84%
56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS 250 WATTS
|
Motorola Inc
Motorola, Inc.
ONSEMI[ON Semiconductor]
|
| RFP-10-100RV |
Flanged Resistors 10 Watts, 100Ω
Flanged Resistors 10 Watts, 100ヘ
|
Anaren Microwave
|
| MJD42C ON2003 MJD74C MJD41C-1 MJD41CT4 MJD41C |
SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS20 WATTS
From old datasheet system
DPAK For Surface Mount Applications
SILICON POWER TRANSISTORS 6 AMPERES 100 VOLTS 20 WATTS
|
MOTOROLA INC
MOTOROLA[Motorola, Inc]
ON Semi
Motorola, Inc.
|
| NJM12904 NJM12904D NJM12904E NJM12904L NJM12904M N |
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz / 200s Pulse / 10 Duty
Radar Pulsed Power Amplifier-190 Watts 2.7-3.1GHz,200ms Pulse,10% Duty
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200s Pulse, 10 Duty
Radar Pulsed Power Amplifier.190 Watts 2.7.3.1 GHz, 200レs Pulse, 10 Duty 雷达脉冲功率Amplifier.190.7.3.1千兆赫，200レ拧脉冲10职务
|
MA-Com
MACOM[Tyco Electronics]
Analog Devices, Inc.
|
| PTF10154 |
85 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor
85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85瓦，1.93-1.99 GHz的GOLDMOS场效应晶体管
85 Watts 1.93-1.99 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
| PTB20105 |
20 Watts, 92560 MHz Cellular Radio RF Power Transistor
20 Watts, 925-960 MHz Cellular Radio RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTF10149 |
70 Watts, 92160 MHz GOLDMOS Field Effect Transistor
70 Watts, 921-960 MHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTF10133 |
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 85瓦，860-960兆赫GOLDMOS场效应晶体管
85 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTB20176 |
5 Watts, 1.78-1.92 GHz RF Power Transistor 5瓦，1.78-1.92 GHz射频功率晶体
5 Watts, 1.78?.92 GHz RF Power Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTB20006 |
4 Watts, 86000 MHz Cellular Radio RF Power Transistor
4 Watts, 860-900 MHz Cellular Radio RF Power Transistor
4 Watts/ 860-900 MHz Cellular Radio RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
